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AEM

CP784X-CXT7090L

40V,3A,1.2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
450 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
3 A
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
250 x10³
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
300 — 800 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
5 A
Power Dissipation
1.2 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active40V,3A,1.2W Bare die,39.760 X 39.760 mils,Transistor-Bipolar Power (>1A)WafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP784X-CXT7090L_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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