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AEM

CP788X-2N2605

45V,30mA,400mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.9 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Cutoff Current (ICES)
0.01 µA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
30 mA
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
600 x10³
DC Current Gain (hFE)
100 — 300 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
2 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0040
Input Impedance Common Base (hib)
25 — 35 Ω
Input Impedance Common Emitter (hie)
0.2 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Output Admittance Common Base (hob)
1 µS
Output Capacitance (Cob)
6 pF
Power Dissipation
400 mW
Small Signal Current Gain (hfe)
150 — 600 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
438 °C/W
Voltage Feedback Ratio Common Base (hrb)
1 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active45V,30mA,400mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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