CP788X-2N3799
60V,50mA,360mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
0.7 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.7 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
80 MHz
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
300 x10³
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
300 — 900 x10³
DC Current Gain (hFE)
300 x10³
DC Current Gain (hFE)
250 x10³
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
225 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
15 pF
Input Impedance Common Emitter (hie)
10 — 40 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
1.5 dB
Noise Figure (NF)
1.5 dB
Noise Figure (NF)
2.5 dB
Noise Figure (NF)
4 dB
Output Admittance Common Emitter (hoe)
5 — 60 µS
Output Capacitance (Cob)
5 pF
Power Dissipation
1.2 W
Power Dissipation
360 mW
Small Signal Current Gain (hfe)
300 — 900 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
490 °C/W
Thermal Resistance Junction-Case
150 °C/W
Voltage Feedback Ratio Common Emitter (hre)
2.5 x10⁻³
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 60V,50mA,360mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE | |
| Active | 60V,50mA,360mW Bare die,13.700 X 13.700 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP788X-2N3799_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Spice Model:Spice Model CP788 | Spice Model |