CP788X-BCW70
Bare die,13.700 X 13.700 mils,Low Noise Amplifier Transistor
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.85 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
250 x10³
DC Current Gain (hFE)
250 x10³
DC Current Gain (hFE)
250 — 800 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage
3 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
350 mW
Small Signal Current Gain (hfe)
250 — 900 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | Bare die,13.700 X 13.700 mils,Low Noise Amplifier Transistor | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP788X-BCW70_WPD.pdf | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |