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AEM

CP792V-2N3251A

60V,200mA,360mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 0.9 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEV)
0.02 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
90 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
80 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
1.2 W
Power Dissipation
360 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
486 °C/W
Thermal Resistance Junction-Case
146 °C/W
Turn Off Time (toff)
250 ns
Turn On Time (ton)
70 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active60V,200mA,360mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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