CP792V-2N3906
40V,200mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.65 — 0.85 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.05 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
60 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
10 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
4 dB
Output Capacitance (Cob)
4.5 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
100 — 400 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Turn Off Time (toff)
300 ns
Turn On Time (ton)
70 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 40V,200mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE | |
| Active | 40V,200mA,625mW Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,11.024 X 11.024 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE | |
| Active | 40V,200mA,625mW Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,11.024 X 11.024 mils,Transistor-Small Signal (<=1A) | Wafer | PBFREE | ||
| Active | 40V,200mA,625mW Up-Screened Bare Die MIL-PRF-38534 Class K Equivalent,11.024 X 11.024 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |