Skip to main content
AEM

CPS053-2N2323

1.6A,50V Bare die,53.150 X 53.150 mils,SCR

Specifications

Average Gate Power
10 mW
Average On-State Current
1 A
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VTM)
1.5 V
Gate Trigger Current (IGT)
0.2 mA
Gate Trigger Voltage (VGT)
0.8 V
Holding Current (IH)
2 mA
HTS Code
8541.30.0040
Junction Temperature (Tj)
-65 — 125 °C
Peak Forward Gate Current
100 mA
Peak Gate Power
100 mW
Peak Gate Voltage
6 V
Peak Non-Repetitive Reverse Voltage
75 V
Peak Off-State Blocking Current (IDRM)
5 µA
Peak One Cycle Surge Current
15 A
Peak Repetitive Off-State Voltage
50 V
Peak Repetitive Reverse Voltage
50 V
Peak Reverse Blocking Current (IRRM)
5 µA
RMS On-State Current
1.6 A
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active1.6A,50V Bare die,53.150 X 53.150 mils,SCRWafflePack400PBFREE
Active1.6A,50V Bare die,53.150 X 53.150 mils,SCRWafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CPS053.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

Recently Viewed