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AEM

CPS053-2N5064

.8A,200V Bare die,53.150 X 53.150 mils,SCR

Specifications

Average Gate Power
10 mW
Average On-State Current
255 mA
Average On-State Current
510 mA
Case Type
CHIP,WAFFLE
Delay Time (td)
3000 ns
ECCN Code
EAR99
Forward Voltage (VTM)
1.7 V
Gate Non-Trigger Voltage (VGD)
0.1 V
Gate Trigger Current (IGT)
0.35 mA
Gate Trigger Current (IGT)
0.2 mA
Gate Trigger Voltage (VGT)
1.2 V
Gate Trigger Voltage (VGT)
0.8 V
Holding Current (IH)
10 mA
Holding Current (IH)
5 mA
HTS Code
8541.30.0040
Junction Temperature (Tj)
-40 — 125 °C
Peak Forward Gate Current
1 A
Peak Gate Power
100 mW
Peak Off-State Blocking Current (IDRM)
50 µA
Peak Off-State Blocking Current (IDRM)
10 µA
Peak One Cycle Surge Current
10 A
Peak Repetitive Off-State Voltage
200 V
Peak Repetitive Reverse Voltage
200 V
Peak Reverse Blocking Current (IRRM)
50 µA
Peak Reverse Blocking Current (IRRM)
10 µA
Peak Reverse Gate Voltage
5 V
Rate of Rise of Reverse Voltage (dv/dt)
30 V/µs
Rise Time (tr)
200 ns
RMS On-State Current
800 mA
Storage Temperature (Tstg)
-40 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
75 °C/W
Turn Off Time (tq)
30000 ns
Value For Fusing
0.4

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active.8A,200V Bare die,53.150 X 53.150 mils,SCRWafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CPS053.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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