CPS053-CS18B
1A,200V Bare die,53.150 X 53.150 mils,SCR
Specifications
Average Gate Power
100 mW
Case Type
CHIP,WAFFLE
ECCN Code
EAR99
Forward Voltage (VTM)
2.15 V
Gate Trigger Current (IGT)
0.2 mA
Gate Trigger Voltage (VGT)
0.8 V
Holding Current (IH)
5 mA
HTS Code
8541.30.0040
Junction Temperature (Tj)
-40 — 125 °C
Peak Forward Gate Current
1 A
Peak Gate Power
2 W
Peak Off-State Blocking Current (IDRM)
100 µA
Peak Off-State Blocking Current (IDRM)
1 µA
Peak One Cycle Surge Current
10 A
Peak Repetitive Off-State Voltage
200 V
Peak Repetitive Reverse Voltage
200 V
Peak Reverse Blocking Current (IRRM)
100 µA
Peak Reverse Blocking Current (IRRM)
1 µA
Rate of Rise of Reverse Voltage (dv/dt)
25 V/µs
RMS On-State Current
1 A
Storage Temperature (Tstg)
-40 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
32 °C/W
Value For Fusing
0.24
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 1A,200V Bare die,53.150 X 53.150 mils,SCR | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CPS053.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |