
NEW at Central Semiconductor: Super Junction MOSFETs
Central Semiconductor announces the introduction of several new 650V Super Junction N-Channel MOSFETs designed for high-voltage, fast-switching applications.
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Central Semiconductor announces the introduction of several new 650V Super Junction N-Channel MOSFETs designed for high-voltage, fast-switching applications.

Explore Central Semiconductor's new high-efficiency GaN FETs, designed for maximum power density and fast switching in advanced power conversion applications.

Central Semiconductor's HyperFast Rectifiers provide ultra-fast recovery and low switching losses for high-efficiency power conversion in industrial applications.

Central Semiconductor’s Spacellite™ MOSFETs are radiation-tolerant, high-reliability power solutions engineered for Low Earth Orbit (LEO) satellite applications.

Central Semiconductor Corp. introduces its new line of Zero Temperature Coefficient (ZTC) current limiting diodes (CLDs) packaged in the DPAK case.

Central Semiconductor Corp., introduces its CAK3-012C & CAK6-042C series of 5G bi-directional transient voltage suppressors (TVS).

Central Semiconductor introduces its latest 100V low profile Schottky rectifiers: the 3A CMDFSHC3-100 and the 5A CMDFSHC5-100.

Central Semiconductor introduces the CBRDFA4-100, a 4.0A, 1000V full wave bridge rectifier with a glass passivated die.

Central Semiconductor has introduced its new portfolio of Silicon Carbide Schottky Rectifier die.

Central Semiconductor has released its new adjustable current limiting diode, the CMJA5050.
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Central’s latest article examines how the CBRDFSH Schottky Bridge Rectifiers are the ideal choice for Power over Ethernet (PoE) devices.
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AEM, Inc. announced that it is a recipient of a 4-Star Supplier Excellence Award for 2018 by Raytheon's Integrated Defense Systems (IDS) business.